- 您现在的位置：买卖IC网 > Sheet目录540 > ZXMN3A14FTA (Diodes Inc)MOSFET N-CH 30V 3.2A SOT23-3
A Product Line of
Diodes Incorporated
ZXMN3A14F
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
1
±100
V
μ A
nA
I D = 250 μ A, V GS = 0V
V DS = 30V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 and 10)
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
1.0
?
?
?
?
?
?
48
69
7.1
0.85
13
7
2.2
65
95
?
0.95
?
?
V
m ?
S
V
ns
nC
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = 3.2A
V GS = 4.5V, I D = 2.6A
V DS = 15V, I D = 3.2A
T J = 25°C, I S = 2.5A, V GS = 0V
T J = 25°C, I F = 1.6A,
di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
C iss
C oss
C rss
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
?
?
?
?
?
?
?
?
?
?
448
82
49
2.4
2.5
13.1
5.3
8.6
1.4
1.8
?
?
?
?
?
?
?
?
?
?
pF
ns
nC
V DS = 15V, V GS = 0V
f = 1.0MHz
V DD = 15V, I D = 1A,
R G ? 6.0 Ω, V GS = 10V
V DS =15V, V GS = 10V,
I D = 3.2A
Notes:
8. Measured under pulsed conditions. Pulse width = 300 μ s. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXMN3A14F
Document Number DS33536 Rev. 2 - 2
4 of 8
www.diodes.com
April 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
ZXMN3AM832TA
MOSFET N-CHAN DUAL 30V 8MLP
ZXMN3AMCTA
MOSFET 2N-CH 30V 2.9A DFN
ZXMN3B01FTA
MOSFET N-CHAN 30V 2A SOT23-3
ZXMN3B04N8TC
MOSFET N-CHAN 30V 8SOIC
ZXMN3B14FTA
MOSFET N-CHAN 30V 3.5A SOT23-3
ZXMN3F30FHTA
MOSFET N-CHAN 30V SOT23-3
ZXMN3F31DN8TA
MOSFET N-CHAN 30V 8SOIC DUAL
ZXMN3G32DN8TA
MOSFET N-CHAN 30V 8SOIC DUAL
相关代理商/技术参数
ZXMN3A14FTA-CUT TAPE
制造商:DIODES 功能描述:ZXMN3A14 Series 30 V 0.065 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
ZXMN3A14FTC
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3AM832
制造商:ZETEX 制造商全称:ZETEX 功能描述:MPPS Miniature Package Power Solutions DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3AM832(1)
制造商:未知厂家 制造商全称:未知厂家 功能描述:
ZXMN3AM832TA
功能描述:MOSFET Dl 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3AM832TC
制造商:ZETEX 制造商全称:ZETEX 功能描述:MPPS Miniature Package Power Solutions DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3AMC
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3AMCTA
功能描述:MOSFET 30V DUAL N-CH ENH 20V VGS 3.7 IDS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube